TY - CONF
AU - Robert Troy
AU - Aidan Szabo
AU - Argyros Varonides
AB - <div>Two dimensional electrostatics and quantum size effects have become important features of modern short channel MOSFET device design where the surface potential becomes spatially dependent affecting the threshold voltage Several nanometer channel lengths between Source and Drain cause quantum effects that need to be addressed in modern MOSFET design. We present a model of electron transport in the 2D inversion layer, where (a) electrostatic and (b) quantum size effects are pointed out.</div>
BT - HamSCI Workshop 2023
C1 - <p><a href="/sites/default/files/pages/hamsci_workshop_2023/posters/p_szabo_aidan.pdf"><img alt="p_szabo_aidan.png" class="center-block img-responsive" src="/sites/default/files/pages/hamsci_workshop_2023/posters/p_szabo_aidan.png" /></a></p>

CY - Scranton, PA
DA - 03/2023
LA - eng
N2 - <div>Two dimensional electrostatics and quantum size effects have become important features of modern short channel MOSFET device design where the surface potential becomes spatially dependent affecting the threshold voltage Several nanometer channel lengths between Source and Drain cause quantum effects that need to be addressed in modern MOSFET design. We present a model of electron transport in the 2D inversion layer, where (a) electrostatic and (b) quantum size effects are pointed out.</div>
PB - HamSCI
PP - Scranton, PA
PY - 2023
T2 - HamSCI Workshop 2023
TI - Electrostatic and Quantum Size Effects in Short Channel MOSFETs
ER -